FDMC8010ET30 mosfet equivalent, n-channel mosfet.
* Extended TJ Rating to 175°C
* Max rDS(on) = 1.3 mW at VGS = 10 V, ID = 30 A
* Max rDS(on) = 1.8 mW at VGS = 4.5 V, ID = 25 A
* High Performance Technolo.
where ultra low rDS(on) is required in small spaces such as High performance VRM, POL and Oring functions.
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